Green Product
SP2110
Ver 1.
0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
ID
1.
6A
R DS(ON) (m Ω) Max
390 @ VGS=10V 460 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D1
D1
D2
D2
PIN1
PDFN 5x6
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
c ac
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 100 ±20 1.
6 1.
28 7 2.
5 1.
6 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation
a
Operating Junction and Storage ...