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SP2103

SamHop Microelectronics
Part Number SP2103
Manufacturer SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Green Product SP2103 Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor...
Datasheet PDF File SP2103 PDF File

SP2103
SP2103

Overview
Green Product SP2103 Ver 1.
3 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2.
2A R DS(ON) (m Ω) Max 220 @ VGS=10V 350 @ VGS=4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit 100 ±20 2.
2 1.
8 9 16 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.
5 1.
6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 5 50 °C/W °C/W Details are subject to change without notice.
Jul,18,2013 1 www.
samhop.
com.
tw SP2103 Ver 1.
3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=1.
1A VGS=4.
5V , ID=0.
9A VDS=10V , ID=1.
1A 1 1.
5 185 220 3 1.
9 220 350 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.
0MHz 453 34 23 634 48 41 VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=1.
1A,VGS=10V VDS=50V,ID=1.
1A,VGS=4.
5V VDS=50V,ID=1.
1A, VGS=10V 9.
5 10 18.
3...


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