SVD1N80B/F/M/T_Datasheet
1A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
TO-251-3L TO-220F-3L 1 3 1.
Gate 2.
Drain 3.
Source TO-220-3L 2
FEATURES
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TO-92-3L
1A,800V,RDS(on)(typ)=13.
5Ω@VGS...