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SVD1N80B

Silan Microelectronics
Part Number SVD1N80B
Manufacturer Silan Microelectronics
Description 800V N-CHANNEL MOSFET
Published Oct 20, 2014
Detailed Description SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode p...
Datasheet PDF File SVD1N80B PDF File

SVD1N80B
SVD1N80B

Overview
SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
TO-251-3L TO-220F-3L 1 3 1.
Gate 2.
Drain 3.
Source TO-220-3L 2 FEATURES ∗ ∗ ∗ ∗ ∗ TO-92-3L 1A,800V,RDS(on)(typ)=13.
5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVD1N80M SVD1N80T SVD1N80B SVD1N80BTR SVD1N80F Package TO-251-3L TO-220-3L TO-92-3L TO-92-3L TO-220F-3L Marking SVD1N80M SVD1N80T 1N80B 1N80B SVD1N80F Material Pb free Pb free Pb free ...


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