Part Number
|
IXTV200N10TS |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Oct 25, 2014 |
Detailed Description
|
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTV200N10T IXTV200N10TS
VDSS ID25
RDS(on)
= 100V...
|
Datasheet
|
IXTV200N10TS
|
Overview
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTV200N10T IXTV200N10TS
VDSS ID25
RDS(on)
= 100V = 200A ≤ 5.
5mΩ
PLUS220 (IXFV) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL FC Weight 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting force (PLUS220) PLUS220 types Test Conditions T J = 25°C to 175°C T J = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 30 200 75 500 40 1.
5 550 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 11.
65 / 2.
5.
.
14.
6 4 V V V A A A A J W °C °C °C °C °C N/lb.
g Features International standard packages 175°...
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