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IXTV200N10T

IXYS Corporation
Part Number IXTV200N10T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Oct 25, 2014
Detailed Description TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V...
Datasheet PDF File IXTV200N10T PDF File

IXTV200N10T
IXTV200N10T

Overview
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.
5mΩ PLUS220 (IXFV) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL FC Weight 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting force (PLUS220) PLUS220 types Test Conditions T J = 25°C to 175°C T J = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 30 200 75 500 40 1.
5 550 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 11.
65 / 2.
5.
.
14.
6 4 V V V A A A A J W °C °C °C °C °C N/lb.
g Features International standard packages 175°...


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