BF8205T
BYD Microelectronics Co.
, Ltd.
Dual N-Channel MOSFET
General Description
The BF8205T is a dual N-channel MOS Field Effect
Transistor, Which is applied to electronic systems as a power switch.
Features
• VDS (V) =20V • Low on-state resistance RDS(on) ≤ 22.
0mΩ TYP(VGS = 4.
5V, ID = 3.
0A) RDS(on) ≤ 32.
0mΩ TYP(VGS = 2.
5V, ID = 3.
0A)
Absolute Maximum Ratings (Tc = 25℃)
Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
a b
Value 20 ±12 5 20 2 150 -55~+150
Unit V V A A W ℃ ℃
Total Power Dissipation Channel Temperature Storage Temperature
Note a.
PW10us, Duty Cycle1%, VGS=4.
5V.
b.
Mounte...