DatasheetsPDF.com

BF8205E

BYD
Part Number BF8205E
Manufacturer BYD
Description Dual N-Channel MOSFET
Published Apr 12, 2017
Detailed Description BYD Microelectronics Co., Ltd. BF8205E Dual N-Channel MOSFET General Description The BF8205E is a dual N-channel MOS F...
Datasheet PDF File BF8205E PDF File

BF8205E
BF8205E

Overview
BYD Microelectronics Co.
, Ltd.
BF8205E Dual N-Channel MOSFET General Description The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch.
This device has ESD protection.
G1 D1/D2 G2 654 12 3 Features z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.
5V, ID = 3.
0A) RDS(on) ≤ 24mΩ (VGS = 3.
8V, ID = 3.
0A) RDS(on) ≤ 32mΩ (VGS = 2.
5V, ID = 3.
0A) z Built-in G-S protection diode against ESD.
z Lead Pb-free and Halogen-free S1 D1/D2 S2 Absolute Maximum Ratings (Tc = 25℃) Symbol Parameter VDS Drain-source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-source Voltage PD Power Dissipation (TC = 25°C) TJ,Tstg Operating and Storage Temperature Range (Note1) (Note2) (Note1) Value 20 6 24 ±12 1.
25 -55 to +150 Unit V A A...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)