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7N60


Part Number 7N60
Manufacturer KIA
Title N-CHANNEL MOSFET
Description The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re...
Features „ „ „ „ „ „ 6.9A, 600V, RDS(on)= 1.1Ω @ VGS= 10 V Low gate charge ( typical 32nC) Low crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 7 KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 4. Absolute...

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7N60 : The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(38nC max.) Low reverse transfer capacitance (CRSS = 16pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 7 VDSS (V) 600 RDS(ON) (Ω) 1.2 @ VGS = .

7N60 : The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) 1.0Ω @ VGS = 10V * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 7N60L-TA3-T 7N60G-TA3-T TO-220 7N60L-TF3-T 7N60G-TF3-T TO-220F 7N60L-TF1-T 7N60G-TF1-T TO-220F1 7N60L-TF2-T 7N60G-TF2-T TO-220.

7N60 : isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Plused 29.6 A PD Total Dissipation @TC=25℃ 142 W Tj M.

7N60-CB : The UTC 7N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) 1.0Ω @ VGS = 10V, ID = 3.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TM3-T 7N60G-.

7N60-F : The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2Ω @ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N6.

7N60-M : The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2@ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N60L.

7N60-Q : The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2 @ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N60.

7N60-R : The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2 @ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N60.

7N60-TC : The UTC 7N60-TC is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N60-TC is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) 1.2Ω @ VGS = 10 V, ID = 3.5A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF3T-T 7N60G-TF3T-T 7N65L-TM3-T 7N65G-TM3-T 7N65L-TN3.

7N60A : ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 600 ±20 7 V V A ID(puls) Pulse Drain Current 28 A Ptot Total Dissipation@TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.

7N60A : The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(38nC max.) Low reverse transfer capacitance (CRSS = 16pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 7 VDSS (V) 600 RDS(ON) (Ω) 1.2 @ VGS = .

7N60A : The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply. „ FEATURES * VDS = 600V * ID = 7A * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 28 nC ) * Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness „ SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Ha.

7N60AF : The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(38nC max.) Low reverse transfer capacitance (CRSS = 16pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 7 VDSS (V) 600 RDS(ON) (Ω) 1.2 @ VGS = .

7N60B : INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Plused 29.6 A PD Total Dissipation @TC=25℃ 142 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperatur.

7N60B : www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 300 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 14 7 30 ICM = 14 @ 0.8 VCES 54 -55 ... +150 150 -55 ... +150 300 Μ3 Μ3.5 0.45/4 0.55/5 4 2 V V V V A A A TO-220AB (IXGP) G CE TO-263 AA (IXGA) G A W °C °C °C °C Nm/lb.in. g g Features G = Gate, E = Emitter, E C (TAB) C = Collector, TAB = Collector Maximum lead temper.

7N60C : HiPerFASTTM IGBT LightspeedTM Series IXGA 7N60C IXGP 7N60C VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.7 V = 45 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 300 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 14 7 30 ICM = 14 @ 0.8 VCES 54 http://www.DataSheet4U.com/ TO-220AB (IXGP) V V V V A A A A W C C C C Features • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • High frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM .




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