DatasheetsPDF.com

7N10

Unisonic Technologies
Part Number 7N10
Manufacturer Unisonic Technologies
Description N-Channel Power MOSFET
Published Feb 17, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 7N10 7.0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N10 is an N-Channel enhance...
Datasheet PDF File 7N10 PDF File

7N10
7N10

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 7N10 7.
0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance.
The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality.
This device can also withstand high energy pulse in the avalanche and the commutation mode.
The UTC 7N10 is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters.
 FEATURES * RDS(ON) ≤ 0.
35 Ω @ VGS =10V, ID =3.
5A * Fast Switching * Improved dv/dt Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N10L-AA3-R 7N10G-AA3-R 7N10L-TM3-T 7N10G-TM3-T 7N10L-TN3-R 7N10G-TN3-R 7N10L-TND-R 7N10G-TND-R 7N10L-TQ2-T 7N10G-TQ2-T 7N10L-TQ2-R 7N10G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-251 TO-252 TO-252D TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Reel Tube Tape Reel Tape Reel Tube Tape Reel www.
unisonic.
com.
tw Copyright © 2021 Unisonic Technologies Co.
, Ltd 1 of 9 QW-R502-394.
K 7N10  MARKING SOT-223 Power MOSFET TO-251 / TO-252 / TO-252D UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 9 QW-R502-394.
K 7N10 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) Single Pulsed Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 100 V ±25 V 7 A 14 A 117 mJ 6.
0 V/ns Power Dissipation SOT-223 TO-251/TO-252 TO-252D PD 2.
5 W 32 W TO-263 55 W Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)