INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC1969
DESCRIPTION ·High Power Gain-
: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability
APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage RBE= ∞
25
V
VEBO Emitter-Base Voltage
5V
IC Collector Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
6A
20 W
1.
7
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Rth j-c
...