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C1923

Toshiba Semiconductor
Part Number C1923
Manufacturer Toshiba Semiconductor
Description 2SC1923
Published Aug 22, 2015
Detailed Description 2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Application...
Datasheet PDF File C1923 PDF File

C1923
C1923

Overview
2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm · Small reverse transfer capacitance: Cre = 0.
7 pF (typ.
) · Low noise figure: NF = 2.
5dB (typ.
) (f = 100 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 20 4 100 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.
21 g (typ.
) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain ICBO IEBO VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 hFE VCE = 6 V, IC = 1 m...


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