Part Number
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AS4C4M4F1 |
Manufacturer
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Alliance Semiconductor |
Description
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5V 4M x 4 CMOS DRAM |
Published
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Nov 24, 2014 |
Detailed Description
|
®
5V 4M×4 CMOS DRAM (Fast Page mode)
AS4C4M4F0 AS4C4M4F1
Features
• Organization: 4,194,304 words × 4 bits • High spee...
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Datasheet
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AS4C4M4F1
|
Overview
®
5V 4M×4 CMOS DRAM (Fast Page mode)
AS4C4M4F0 AS4C4M4F1
Features
• Organization: 4,194,304 words × 4 bits • High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption - Active: 908 mW max - Standby: 5.
5 mW max, CMOS I/O • Fast page mode • Refresh - 4096 refresh cycles, 64 ms refresh interval for
AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh
• TTL-compatible, three-state I/O
• JEDEC standard package
- 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP • Latch-up current ≥ 200 mA • ESD protection ≥ 2000 mV • Industrial and commercial temperature ava...
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