FDP5N50 / FDPF5N50 N-Channel MOSFET
FDP5N50 / FDPF5N50
N-Channel MOSFET
500V, 5A, 1.
4Ω
Features
• RDS(on) = 1.
15Ω ( Typ.
)@ VGS = 10V, ID = 2.
5A • Low gate charge ( Typ.
11nC) • Low Crss ( Typ.
5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode.
These devices are well suited for high...