DatasheetsPDF.com

FDPF5N50NZ

Fairchild Semiconductor
Part Number FDPF5N50NZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Sep 9, 2015
Detailed Description FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A,...
Datasheet PDF File FDPF5N50NZ PDF File

FDPF5N50NZ
FDPF5N50NZ

Overview
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.
5 A, 1.
5 Ω Features • R DS(on) = 1.
38 Ω (Typ.
) @ VGS = 10 V, ID = 2.
25 A • Low Gate Charge (Typ.
9 nC) • Low CRSS (Typ.
4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/ LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply December 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.
This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D GDS TO-220 G GDS TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering , 1/8” from Case for 5 Seconds.
*Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev.
C1 1 S FDP5N50NZ FDPF5N50NZ 500 ±25 4.
5 4.
5* 2.
7 2.
7* (Note 1) 18 18* (Note 2) 160 (Note 1) 4.
5 (No...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)