HSCH-53xx Series Beam Lead
Schottky Diodes for Mixers and Detectors (1-26 GHz)
Data Sheet
Description
These beam lead diodes are constructed using a metalsemiconductor
Schottky barrier junction.
Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
Applications
The beam lead diode is ideally suited for use in stripline or microstrip circuits.
Its small p...