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HSCH-5312

AVAGO
Part Number HSCH-5312
Manufacturer AVAGO
Description Beam Lead Schottky Diodes
Published Dec 8, 2014
Detailed Description HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead d...
Datasheet PDF File HSCH-5312 PDF File

HSCH-5312
HSCH-5312

Overview
HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits.
Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band.
Features • Platinum tri-metal system High temperature stability • Silicon nitride passivation Stable, reliable performance • Low noise figure Guaranteed 7.
5 dB at 26 GHz • High uniformity Ti...


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