TOSHIBA
Preliminary
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Chanenel IGBT
GT10J321
GT10J321
High Power Switching Applications Fast Switching Applications
● ● ●
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The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ● :t High speed f=0.
03μs(typ.
) ● Low switching loss :Eon=0.
26mJ(typ.
) :Eoff=0.
18mJ(typ.
) Low saturation voltage :VCE(sat)=2.
0V(typ.
) FRD included between emitter and collector
Maximum Ratings (Ta=25℃)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range DC 1ms DC 1m...