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GT10J321

Part Number	GT10J321
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Mar 23, 2005
Detailed Description	TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Swi...
Datasheet	GT10J321 PDF File

Overview

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications ●　 ●　 ●　 ●　 ●　 The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ●　 :t High speed f=0.
03μs(typ.
) ●　 Low switching loss :Eon=0.
26mJ(typ.
) :Eoff=0.
18mJ(typ.
) Low saturation voltage :VCE(sat)=2.
0V(typ.
) FRD included between emitter and collector Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range DC 1ms DC 1m...

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