GT25Q102
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT25Q102
High Power Switching Applications
Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.
32 µs (max) Low Saturation Voltage: VCE (sat) = 2.
7 V (max)
· · · ·
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 ±20 25 50 200 150 -55~150 Unit V V A
W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F2C
Weight: 9.
75 g (typ.
)
1
2003-03-18
GT25Q102
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage cur...