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GT25Q102

Toshiba Semiconductor
Part Number GT25Q102
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Un...
Datasheet PDF File GT25Q102 PDF File

GT25Q102
GT25Q102

Overview
GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.
32 µs (max) Low Saturation Voltage: VCE (sat) = 2.
7 V (max) · · · · Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 ±20 25 50 200 150 -55~150 Unit V V A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Weight: 9.
75 g (typ.
) 1 2003-03-18 GT25Q102 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) ¾ Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 2.
5 mA, VCE = 5 V IC = 25 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 25 A VGG = ±15 V, RG = 43 W (Note1) Min ¾ ¾ 4.
0 ¾ ¾ Typ.
¾ ¾ ¾ 2.
1 1360 0.
10 0.
30 0.
16 0.
68 ¾ Max ±500 1.
0 7.
0 2.
7 ¾ Unit nA mA V V pF ¾ ¾ ¾ ¾ ¾ ¾ ¾ 0.
32 ms ¾ 0.
625 °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT25Q301 -VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% Note2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE 10% Eoff Eon 2 2003-03-18 GT25Q102 IC – VCE 50 20 Common emitter Tc = 25°C 40 Common emitter VCE – VGE (V) Tc = -40°C 16 (A) IC Collector-emitter voltage 20 30 15 VCE 20 10 10 12 Collector current 8 IC = 10 A 4 25 50 VGE = 9 V 0 0 1 2 3 4 5 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE – VGE 20 Common emitter 20 Common emitter Tc = 25°C VCE – VGE (V) (V) 16 ...


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