GT60N321
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications The 4th Generation
Unit: mm
· · · ·
FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.
25 µs (typ.
) (IC = 60 A) FRD : trr = 0.
8 µs (typ.
) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 2.
3 V (typ.
) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque DC 1 ms DC 1 ms symbol VCES VGES IC ICP IECF IECFP PC Tj Tstg ¾ Rating 1000 ±25 60 120 15...