Part Number
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FDC365P |
Manufacturer
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Fairchild Semiconductor |
Description
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P-Channel PowerTrench MOSFET |
Published
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Dec 27, 2014 |
Detailed Description
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FDC365P P-Channel PowerTrench® MOSFET
FDC365P
P-Channel PowerTrench® MOSFET
-35V, -4.3A, 55mΩ
Features
Max rDS(on) = ...
|
Datasheet
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FDC365P
|
Overview
FDC365P P-Channel PowerTrench® MOSFET
FDC365P
P-Channel PowerTrench® MOSFET
-35V, -4.
3A, 55mΩ
Features
Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.
2A Max rDS(on) = 80mΩ at VGS = -4.
5V, ID = -3.
2A RoHS Compliant
November 2007
tm
General Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Applications
Inverter Power Supplies
S D D
Pin 1
D D
SuperSOTTM -6
G
D1 D2 G3
6D 5D 4S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter Drain to Source Voltage Gate...
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