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FDC365P

Fairchild Semiconductor
Part Number FDC365P
Manufacturer Fairchild Semiconductor
Description P-Channel PowerTrench MOSFET
Published Dec 27, 2014
Detailed Description FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ Features „ Max rDS(on) = ...
Datasheet PDF File FDC365P PDF File

FDC365P
FDC365P

Overview
FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET -35V, -4.
3A, 55mΩ Features „ Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.
2A „ Max rDS(on) = 80mΩ at VGS = -4.
5V, ID = -3.
2A „ RoHS Compliant November 2007 tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Applications „ Inverter „ Power Supplies S D D Pin 1 D D SuperSOTTM -6 G D1 D2 G3 6D 5D 4S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings -35 ±20 -4.
3 -20 1.
6 0.
8 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 78 156 °C/W Device Marking .
365P Device FDC365P Package SSOT6 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDC365P Rev.
C 1 www.
fairchildsemi.
com FDC365P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -28V, VGS = 0V VGS = ±20V, VDS = 0V -35 V -26 mV/°C -1 ±100 µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, I...


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