isc Silicon
NPN Darlington Power
Transistor
BDX53F
DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-
: hFE= 500(Min)@ IC= 2A ·Complement to Type BDX54F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCER
Collector-Emitter Voltage
160
VCEO
Collector-Emitter Voltage
160
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
8
ICM
Collector Current-Peak
12
IB
Base Current-Continuous
0.
2
PC
Collector Power Dissipation @ TC=25℃
60
TJ
Junction Temperature
150
Tstg
Storage Temperature ...