INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
isc Product Specification
2SA1441
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage-
: VCE(sat)= -0.
3V(Max)@ (IC= -3A, IB=B -0.
15A)
APPLICATIONS
·This type of power
transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is
ideal for use as a driver in DC/DC converters and actuators.
i.
cnABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
iscsemSYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
wwwVCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7.
0 V
IC Collec...