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A1408

Toshiba Semiconductor
Part Number A1408
Manufacturer Toshiba Semiconductor
Description 2SA1408
Published Oct 27, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1408 Color TV Vertical Deflection Output Applications Col...
Datasheet PDF File A1408 PDF File

A1408
A1408

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1408 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications 2SA1408 Unit: mm • Large collector current and collector power dissipation capability • Recommended for vertical deflection output and sound output applications for line-operated TV.
• Complementary to 2SC3621 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage VCEO −150 V Emitter-base voltage VEBO −6 V Collector current IC −1.
5 A Base current IB −1.
0 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
5 W 10 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.
82 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-09 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −150 V, IE = 0 IEBO VEB = −6 V, IC = 0 V (BR) CEO IC = −10 mA, IB = 0 hFE (Note) VCE = −5 V, IC = −200 mA VCE (sat) VBE IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −5 mA fT VCE = −5 V, IC = −200 mA Cob VCB = −10 V, IE = 0, f = 1 MHz Note: hFE cla...


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