2SK1808
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching
regulator, DC-DC converter
Outline
TO-220FM
D 12 3 1.
Gate
G 2.
Drain 3.
Source
S
2SK1808
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Tc = 25 °C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 900 ±30 4 10 4 35 150 –55 to +150
Unit V V A A A W °C °C
2
2S...