Power
Transistors
2SB1503
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2276
20.
0±0.
5
Unit: mm
φ 3.
3±0.
2 5.
0±0.
3
3.
0
2.
0 4.
0 2.
0 3.
0
10.
0 6.
0
s Features
q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): –2.
5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–160 –140 –5 –12 –7 120 3.
5
Junction temperature Storage temperature
Tj 150 Tstg...