HIGH VOLTAGE PHOTO
TRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are photo
transistor-type optically coupled optoisolators.
An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon photo
transistor.
The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1 H11D2 H11D3 H11D4 4N38
FEATURES
• High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute • Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
6 BASE
APPLICATIONS
• • • • • Power supply
regulators Digital logic inputs Microproce...