Transistors
2SC1980
Silicon
NPN epitaxial planar type
For high breakdown voltage low-noise amplification Complementary to 2SA0921
5.
0±0.
2
Unit: mm 4.
0±0.
2
5.
1±0.
2
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
0.
7±0.
1
■ Absolute Maximum Ratings Ta = 25°C
0.
7±0.
2 12.
9±0.
5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
120
V
c type Collector-emitter voltage (Base open) VCEO
120
V
n d ge.
ed Emitter-base voltage (Collector open) VEBO
7
2.
3±0.
2
V
le sta ntinu Collector current
IC
20
mA
a e cyc isco Peak collector current
ICP
50
mA
life d, d Collector power dissipation
PC
250
mW
n u duct type J...