Ordering number:ENN779D
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1209/2SC2911
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
8.
0 4.
0
2.
7
1.
5 3.
0 7.
0
11.
0
1.
6 0.
8
0.
8
0.
6
3.
0
0.
5
15.
5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperat...