Part Number
|
K1803 |
Manufacturer
|
Panasonic |
Description
|
Silicon N-Channel MOSFET |
Published
|
Feb 9, 2015 |
Detailed Description
|
Power F-MOS FETs
2SK1803
Silicon N-Channel Power F-MOS FET
s Features q Avalanche capacity guaranteed: EAS 60mJ q VGSS...
|
Datasheet
|
K1803
|
Overview
Power F-MOS FETs
2SK1803
Silicon N-Channel Power F-MOS FET
s Features q Avalanche capacity guaranteed: EAS 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS*
900 ±30 ±8 ±16 60
Allowable power dissipation
TC = 25°C Ta = 25°C PD
100 3
Channel temperature Storage temperature
Tch 150 Tstg −55 to +150
* L = 1.
9mH,...
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