Part Number
|
IXTC200N085T |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 13, 2015 |
Detailed Description
|
Preliminary Technical Information
TrenchMVTM
IXTC200N085T
Power MOSFET
(Electrically Isolated Back Surface)
N-Chann...
|
Datasheet
|
IXTC200N085T
|
Overview
Preliminary Technical Information
TrenchMVTM
IXTC200N085T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 =
RDS(on) ≤
85 110 5.
5
V A mΩ
Symbol
VDSS VDGR
VGSM
ID25 I
LRMS
IDM
IAR EAS
dv/dt
P D
TJ TJM Tstg
TL T
SOLD
V ISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
Maximum Ratings
85 V 85 V
± 20
V
TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
110 A 75 A
600 A
25 A 1.
0 J
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
T J
≤
175°C,
R G
=
3.
3
Ω
T C
= 25°C
3 V/ns
150
-55 .
.
.
+175 175
-55 .
.
.
+175
W
°C °C °C
1.
6 mm (0.
062 in.
) from ...
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