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IXTC200N085T

IXYS Corporation
Part Number IXTC200N085T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Chann...
Datasheet PDF File IXTC200N085T PDF File

IXTC200N085T
IXTC200N085T

Overview
Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 85 110 5.
5 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 85 V 85 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 110 A 75 A 600 A 25 A 1.
0 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS T J ≤ 175°C, R G = 3.
3 Ω T C = 25°C 3 V/ns 150 -55 .
.
.
+175 175 -55 .
.
.
+175 W °C °C °C 1.
6 mm (0.
062 in.
) from ...


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