Part Number
|
STP310N10F7 |
Manufacturer
|
STMicroelectronics |
Description
|
N-channel Power MOSFET |
Published
|
Feb 15, 2015 |
Detailed Description
|
STP310N10F7
N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package
Datasheet - pr...
|
Datasheet
|
STP310N10F7
|
Overview
STP310N10F7
N-channel 100 V, 2.
3 mΩ typ.
, 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
3 2 1
TO-220
Figure 1.
Internal schematic diagram
'7$%
Order code STP310N10F7
VDS RDS(on) max.
ID 100 V 2.
7 mΩ 180 A
• Ultra low on-resistance • 100% avalanche tested
Applications
• Switching applications
Description
This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
*
6
$0Y
Order codes STP310N10F7
Table 1.
Device summary
Marking
Package
310N10F7
TO-220
Packaging Tube
Ju...
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