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STP310N10F7

Part Number	STP310N10F7
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Published	Feb 15, 2015
Detailed Description	STP310N10F7 N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet - pr...
Datasheet	STP310N10F7 PDF File

Overview

STP310N10F7 N-channel 100 V, 2.
3 mΩ typ.
, 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Figure 1.
Internal schematic diagram '7$% Order code STP310N10F7 VDS RDS(on) max.
ID 100 V 2.
7 mΩ 180 A • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
* 6 $0Y Order codes STP310N10F7 Table 1.
Device summary Marking Package 310N10F7 TO-220 Packaging Tube Ju...

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STP310N10F7 N-channel Power MOSFET - STMicroelectronics

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