Part Number
|
NT5CB64M16AP |
Manufacturer
|
Nanya |
Description
|
1Gb DDR3 SDRAM A-Die |
Published
|
Feb 24, 2015 |
Detailed Description
|
1Gb DDR3 SDRAM A-Die
NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP
Feature
1.5V ± 0.075V (JEDEC Standard Power Supply) ...
|
Datasheet
|
NT5CB64M16AP
|
Overview
1Gb DDR3 SDRAM A-Die
NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP
Feature
1.
5V ± 0.
075V (JEDEC Standard Power Supply) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9 Programmable Additive Latency: 0, CL-1, CL-2 Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 8 bit prefetch architecture Output Driver Impedance Control
Write Leveling OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) Auto Self-Refresh Self-Refresh Temperature Partial Array Self-Refresh RoHS Compliance Packages:
78-Ball BGA for x4 & x8 components 96-Ball BGA for x16 components
Description
The 1Gb Double-Da...
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