Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz.
Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
•
Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg.
, f = 3400 and 3600 MHz, 802.
16d, MHz Channel Bandwidth, Input Signal PAR = 9.
5
6d=4B9Q@0A0M0m.
0A31/,4%P, 4oPubtro=ubrsatbsi,lit7y
on CCDF.
Power Gain — 14 dB
Drain Efficiency — 14%
Device Output Signal PAR — 8.
7 dB @ 0.
01% Probability on CCDF
ACPR @ 5.
25 MHz Offset — - 49 dBc in 0.
5 MHz Channel Bandwidth
• Capable of Handling 1...