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MRF7S38075HSR3

Part Number	MRF7S38075HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 25, 2015
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs...
Datasheet	MRF7S38075HSR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz.
Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
• Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg.
, f = 3400 and 3600 MHz, 802.
16d, MHz Channel Bandwidth, Input Signal PAR = 9.
5 6d=4B9Q@0A0M0m.
0A31/,4%P, 4oPubtro=ubrsatbsi,lit7y on CCDF.
Power Gain — 14 dB Drain Efficiency — 14% Device Output Signal PAR — 8.
7 dB @ 0.
01% Probability on CCDF ACPR @ 5.
25 MHz Offset — - 49 dBc in 0.
5 MHz Channel Bandwidth • Capable of Handling 1...

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MRF7S38075HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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