Part Number
|
QL65O6S-A |
Manufacturer
|
QSI |
Description
|
LASER DIODE |
Published
|
Mar 3, 2015 |
Detailed Description
|
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65O6S-A/B/C Tentative Signature of Approval
Approved by...
|
Datasheet
|
QL65O6S-A
|
Overview
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65O6S-A/B/C Tentative Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.
QSILaser.
com
QL65O6S-A/B/C
InGaAlP Laser Diode
Tentative
Quantum Semiconductor International Co.
, Ltd.
Ver.
1 Aug.
2006
♦OVERVIEW
QL65O6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of CW 100mW and pulse 250mW for optical storage devices such as High Power Laser Modules.
♦APPLICATION
- High Power Laser Modules - Medical Applications - Portable ...
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