DatasheetsPDF.com

QL65O6S-C

Part Number	QL65O6S-C
Manufacturer	QSI
Description	LASER DIODE
Published	Mar 3, 2015
Detailed Description	QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65O6S-A/B/C Tentative Signature of Approval Approved by...
Datasheet	QL65O6S-C PDF File

Overview

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65O6S-A/B/C Tentative Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.
QSILaser.
com QL65O6S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co.
, Ltd.
Ver.
1 Aug.
2006 ♦OVERVIEW QL65O6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of CW 100mW and pulse 250mW for optical storage devices such as High Power Laser Modules.
♦APPLICATION - High Power Laser Modules - Medical Applications - Portable ...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)