Part Number
|
QL83I6S-B |
Manufacturer
|
QSI |
Description
|
LASER DIODE |
Published
|
Mar 5, 2015 |
Detailed Description
|
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL83I6S-A/B/C
Signature of Approval
Approved by Checked...
|
Datasheet
|
QL83I6S-B
|
Overview
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL83I6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
TENTATIVE
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.
QSILaser.
com
QL83I6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co.
, Ltd.
Ver.
1 Mar.
2010
♦OVERVIEW
QL83I6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 30mW for industrial optical module and sensor applications.
♦APPLICATION
- Sensor - Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 830 nm
- Optical Pow...
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