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QL83I6S-C

QSI
Part Number QL83I6S-C
Manufacturer QSI
Description LASER DIODE
Published Mar 5, 2015
Detailed Description QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL83I6S-A/B/C Signature of Approval Approved by Checked...
Datasheet PDF File QL83I6S-C PDF File

QL83I6S-C
QL83I6S-C

Overview
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL83I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer TENTATIVE 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.
QSILaser.
com QL83I6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co.
, Ltd.
Ver.
1 Mar.
2010 ♦OVERVIEW QL83I6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 30mW for industrial optical module and sensor applications.
♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output : λp = 830 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.
6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig.
1) B LD , PD anode (Fig.
2) C LD anode, PD cathode (Fig.
3) Fig.
1 QL85I6SA Fig.
2 QL85I6SB Fig.
3 QL85I6SC...


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