MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH2010FNH
1.
Applications
• High-Efficiency DC-DC Converters • Switching Voltage
Regulators
2.
Features
(1) High-speed switching (2) Small gate charge: QSW = 2.
6 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
2 mA)
3.
Packaging and Internal Circuit
TPH2010FNH
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 250 V
Gate-source voltage
VGSS
±20
Drain...