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TPH2010FNH

Toshiba
Part Number TPH2010FNH
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Mar 7, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2010FNH 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TPH2010FNH PDF File

TPH2010FNH
TPH2010FNH

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2010FNH 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 2.
6 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit TPH2010FNH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±20 Drain...


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