INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD1416
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021
APPLICATIONS ·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
80 V 5V
IC Collector Current-Continuous
7A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=...