PD - 5.
061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ.
= 2.
3V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ ...

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