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GA200TD120U

Part Number	GA200TD120U
Manufacturer	International Rectifier
Description	HALF-BRIDGE IGBT DOUBLE INT-A-PAK
Published	Mar 23, 2005
Detailed Description	PD - 5.061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A "HA...
Datasheet	GA200TD120U PDF File

Overview

PD - 5.
061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ.
= 2.
3V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max.
1200 200 400 400 400 ±20 2500 1040 540 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module Typ.
— — 0.
1 — — 400 Max.
0.
12 0.
20 — 4.
0 3.
0 — Units °C/W N.
m g www.
irf.
com 1 3/20/98 GA200TD120U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) Min.
Typ.
Max.
Units Conditions 1200 — — VGE = 0V, IC = 1mA — 2.
3 2.
8 VGE = 15V, IC = 200A — 2.
1 — V VGE = 15V, IC = 200A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.
0 — 6.
0 IC = 2.
5mA DVGE(th)/DTJ Temperature Coeff.
of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 2.
5mA gfe Forward Transconductance — 261 — S VCE = 25V, IC = 200A ICES Collector-to-Emitter Leaking...

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GA200TD120U HALF-BRIDGE IGBT DOUBLE INT-A-PAK - International Rectifier

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