isc Silicon
NPN Power
Transistors
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type D45H10 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose power amplification and
switching such as output or driver stages in applications such as switching
regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
80
V
VEBO IC ICM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
5
V
10
A
20
A
5...